MCMA110P1600VA phase leg thyristor module 6/7 5/10 8/9 1 4 2 3 part number MCMA110P1600VA backside: isolated tav t v v 1.21 rrm 110 1600 = v = v i = a 2x features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability direct copper bonded al2o3-ceramic line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control v1-a-pack industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact the sales office, whi ch is responsible for you. should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MCMA110P1600VA v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.24 r 0.3 k/w min. 110 v v 100 t = 25c vj t = c vj ma 10 v = v t = 25c vj i = a t v t = c c 85 p tot 380 w t = 25c c 110 1600 forward voltage drop total power dissipation conditions unit 1.52 t = 25c vj 140 v t0 v 0.85 t = c vj 140 r t 3.3 m ? v 1.21 t = c vj i = a t v 110 1.57 i = a 220 i = a 220 threshold voltage slope resistance for power loss calculation only a 125 v v 1600 t = 25c vj i a 170 p gm w t = 30 s 10 max. gate power dissipation p t = c c 140 w t = 5 p p gav w 0.5 average gate power dissipation c j 95 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 140 i2t t = 45c value for fusing t = c 140 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 140 1.90 2.05 13.0 12.7 ka ka ka ka 1.62 1.75 18.1 17.5 1600 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 140 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 140c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 330 a t pg = 0.45 di /dt a/s; g = 0.45 drm cr v = ? v drm gk 1000 1.5 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 150 ma t = c -40 vj 1.6 v 200 ma v gd gate non-trigger voltage t = c vj 0.2 v i gd gate non-trigger current 10 ma v = ? v d drm 140 latching current t = c vj 200 ma i l 25 t s p = 10 i a; g = 0.45 di /dt a/s g = 0.45 holding current t = c vj 200 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 0.45 di /dt a/s g = 0.45 v = ? v d drm turn-off time t = c vj 185 s t q di/dt = a/s 10 dv/dt = v/s 20 v = r 100 v; i a; t = 110 v = ? v drm t s p = 200 non-repet., i = 110 a t 125 r thch thermal resistance case to heatsink k/w thyristor 1700 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 0.20 ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MCMA110P1600VA ratings part number (typ) yywwa date code prod. index lot no.: data matrix: typ (1-19), dc+ prod.index (20-25), fkt# (26-31) leer (33), lfd.# (33-36) c m m a 110 p 1600 va part description thyristor (scr) thyristor (up to 1800v) phase leg v1-a-pack module = = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 2.5 mounting torque 2 t vj c 140 virtual junction temperature -40 weight g 37 symbol definition typ. max. min. conditions operation temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6.0 12.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 100 a per terminal 125 -40 terminal to terminal v1-a-pack delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MCMA110P1600VA 513348 blister 24 MCMA110P1600VA standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.85 m ? v 0 max r 0 max slope resistance * 2.1 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 140 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MCMA110P1600VA remarks / bemerkungen: 1. nominal distance mounting screws on heat sink: 5 2 mm / nennabstand befestigungsschrauben auf khlk?rper: 5 2 mm 2. general tolerance / allgemeintoleranz : din iso 2768 -t1-c 3. surface treatment of pins: tin plated (sn) in ho t dip / oberfl?chenbehandlung der pins: verzinnt (sn) im tau chbad 4. detail x : ejot pt? self-tapping screws (dimension k25) to be recommended for mounting on pcb selbstschneidende schraube (g r??e k25) empfohlen fr die pcb-montage t ake care on the maximum screw length according to b oard thickness and the maximum hole depth of 6 mm bei der wahl der schraubenl?nge die pcb-dicke und die maximale lochtiefe von 6mm beachten recommended mounting torque: 1.5 nm / empfohlenes drehmoment: 1.5 nm 3 8 1 2 4 5 7 9 10 6 6 52 (see 1) 5,5 25 25,75 5,5 15 12,2 1x45 0,3 11,75 0,3 0,5 *11 = = *14 *7 *14 *7 *0 *14 *7 *14 *7 *0 25 25,75 0,3 *11 *0 ? 0,8 * 11,75 0,3 marking on product aufdruck der typenbezeichnung 26 31,6 2 0,5 +0,2 3,6 0,5 1 0,2 2 +0,2 35 63 13 17 r2 max. 0,25 0,25 ? 6,1 ? 2,5 1,5 ? 2,1 4 6 6/7 5/10 8/9 1 4 2 3 outlines v1-a-pack ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MCMA110P1600VA 0 40 80 120 160 0 40 80 120 160 200 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 0.01 0.1 1 800 1200 1600 0.5 1.0 1.5 2.0 0 50 100 150 200 250 3 00 1 10 100 1000 10000 0.00 0.08 0.16 0.24 0.32 i t [a] t [s] v t [v] 2 3 4 5 6 7 8 9 01 1 10 3 10 4 10 5 i 2 t [a 2 s] t [ms] i tsm [a] t vj = 25c t vj = 45c 50 hz, 80% v rrm t vj = 45c v r = 0 v i tavm [a] t case [c] z thjc [k/w] t [ms] fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current fig. 6 max. forward current at case temperature fig. 8 transient thermal impedance junction to case t gd [s] i g [a] lim. typ. fig. 5 gate controlled delay time t gd 0 40 80 120 0 30 60 90 120 150 180 i t(av) [a] p tot [ w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 40 80 120 160 t amb [c] dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 1 10 100 1000 10000 0.1 1 10 v g [v] i g [ma] r thha 0.2 0.4 0.6 0.8 1.0 2.0 t vj = 140c t vj = 140c t vj = 125c 140c 1: i gd , t vj = 140c 2: i gt , t vj = 25c 3: i gt , t vj = -40c i r thi (k/w) t i (s) 1 0.0073 0.0001 2 0.0128 0.0031 3 0.1779 0.1000 4 0.1020 0.4400 t vj = 25c 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w 1 2 3 4 5 6 thyristor ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
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